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| Transys Electronics LIMITED SOT-323 Plastic-Encapsulated Transistors SOT-323 2SB1218A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25 A0. 05 1. 01 R EF 150 mW (Tamb=25) 2. 30 A0. 05 Collector current -100 mA ICM: Collector-base voltage -45 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 1. 30 A0. 03 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-10A, IE=0 Ic=-2mA, IB=0 IE=-10A, IC=0 VCB=-20V, IE=0 VEB=-6V, IC=0 VCE=-10V, IC=-2mA IC=-100mA, IB=-10mA VCE=-10V, IC=-1mA , f=200MHz VCB=-10V, IE=0, f=1MHz -45 -45 -7 -0.1 -0.1 160 460 -0.5 80 2.7 0. 30 2. 00 A0. 05 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 160-260 BQ R 210-340 BR S 290-460 BS |
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